NTE63 Silicon NPN Transistor High Gain, Low Noise Amp
Description: The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high-gain, low noise tuned and wiseband small-signal amplifiers and applications requiring fast switching times. Features: D High Current Gain-Bandwidth Product: fT = 5GHz Typ @ f = 1GHz D High Power Gain: Gpe = 12.5dB Min @ f = 1GHz Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA Total Device Dissipation (TL = +50C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Above 50C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Lead, RthJL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250C/W Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 1mA, IB = 0 V(BR)CBO IC = 0.1mA, IE = 0 V(BR)EBO IE = 0.1mA, IC = 0 ICBO VCB = 15V, IE = 0 12 20 2 - - - - - - - - 50 V V V nA Symbol Test Conditions Min Typ Max Unit
Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified)
Parameter ON Characteristics DC Current Gain Dynamic Characteristics Current Gain-Bandwidth Product Collector-Base Capacitance Functional Tests Noise Figure Power Gain at Optimum Noise Figure Maximum Available Power Gain (Note 1) NFMIN GNF Gmax IC = 5mA, VCE = 10V, f = 1GHz IC = 5mA, VCE = 10V, f = 2GHz IC = 5mA, VCE = 10V, f = 1GHz IC = 5mA, VCE = 10V, f = 2GHz IC = 30mA, VCE = 10V, f = 1GHz IC = 30mA, VCE = 10V, f = 2GHz - - - - - - 2.5 4.0 10 6 12.5 7.5 - - - - - - dB dB dB dB dB dB fT Ccb IC = 30mA, VCE = 10V, f = 1GHz VCB = 10V, IE = 0, f = 1MHz - - 5.0 0.6 - 1.0 GHz pF hFE IC = 30mA, VCE = 10V 30 - 200 Symbol Test Conditions Min Typ Max Unit
Note1.Gmax = |S21|2 / (I - |S11|2) (I - |S22|2)
.075 (1.9) Min
C Seating Plane .770 (19.5) Max E E .190 (4.83) Dia .325 (8.27) Max B
.036 (0.92)
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